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| Switching Diodes MA4X194 Silicon epitaxial planar type Unit : mm For switching circuits 0.65 0.15 2.8 - 0.3 + 0.2 1.5 - 0.05 + 0.25 0.65 0.15 1.1 - 0.1 + 0.2 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Power dissipation Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double VR VRRM IF(AV) IF(AV) IFRM IFRM IFSM IFSM PD Tj Tstg 40 40 100 75 225 170 500 375 150 150 -55 to +150 V V mA mA/Unit mA mA/Unit mA mA/Unit mW C C 0.4 0.2 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1F Internal Connection 4 3 1 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Symbol IR1 IR2 Forward voltage (DC) Terminal capacitance Forward dynamic resistance Reverse recovery time*3 VF Ct r f* 1 r f* 2 trr VR = 40 V VR = 35 V, Ta = 150C IF = 100 mA VR = 6 V, f = 1 MHz IF = 3 mA, f = 30 MHz IF = 3 mA, f = 30 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 0.98 1.0 1.7 Conditions Min Typ Max 10 10 1.2 2.0 2.5 3.6 100 ns Unit nA A V pF Note) *1 : rf measuring instrument: Nihon Koshuha Model TDC-121A *2 : rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER *3 : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0 to 0.1 0.1 to 0.3 0.8 + 0.1 Parameter Symbol Rating Unit 0.16 - 0.06 0.6 - 0 I Absolute Maximum Ratings Ta = 25C + 0.1 3 0.4 - 0.05 * Short reverse recovery time trr * Two isolated elements contained in one package, allowing highdensity mounting 0.5 R 1.9 0.2 0.95 4 0.5 1 2.9 - 0.05 + 0.2 0.95 2 0.2 + 0.1 0.4 - 0.05 1.45 + 0.1 I Features 1 MA4X194 IF V F 103 102 Switching Diodes IR VR 1.2 VF Ta 102 10 1.0 Forward current IF (mA) Reverse current IR (A) 100C 10 25C - 20C 1 Forward voltage VF (V) Ta = 150C Ta = 150C 100C 25C IF = 100 mA 0.8 1 0.6 10 mA 10-1 0.4 3 mA 10-1 10-2 0.2 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 10-3 0 10 20 30 40 50 0 -40 0 40 80 120 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR Ta 102 10 Ct VR f = 1 MHz Ta = 25C 5 10 Terminal capacitance Ct (pF) VR = 30 V 6V Reverse current IR (nA) 3 2 1 1 10-1 0.5 0.3 0.2 10-2 10-3 0 40 80 120 160 0.1 0 10 20 30 40 50 Ambient temperature Ta (C) Reverse voltage VR (V) 2 |
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